| PART |
Description |
Maker |
| MGFC1403 MGFC1403-A12 |
For Microwave Low Noise Amplifiers N-Channel Schottky Barrier Gate Type
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
FOR MICROWAVE LOW-NOISE AMPLIFIERS /N-CHANNEL SCHOTTKY BARRIER GATE TYPE
FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| 2SC3583 2SC3583R 2SC3583S 2SC3583R35 2SC3583R34 2S |
For amplify microwave and low noise.
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体
BJT 双极型晶体管
|
NEC Corp.
NEC, Corp.
|
| MAX2611 |
DC-to-Microwave, Low-Noise Amplifier
|
MAXIM - Dallas Semiconductor
|
| MAX2650 |
DC-to-Microwave, 5V Low-Noise Amplifier
|
MAXIM - Dallas Semiconductor
|
| 2SC3585 2SC3585-T1B 2SC3585R43 2SC3585R45 2SC3585R |
For amplify microwave and low noise.
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 10V的五（巴西）总裁| 35MA一（c）|的SOT - 346
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 35MA I(C) | SOT-346 晶体管|晶体管|叩| 10V的五（巴西）总裁| 35MA一（c）|的SOT - 346
|
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| MP4200135 MP42001 MP4200100 MP42001-509 |
Silicon Bipolar Low Noise Microwave Transistors
|
MPLUSE[M-pulse Microwave Inc.]
|
| MMBTSC3356 |
for microwave low noise amplifier at VHF, UHF and CATV band
|
TY Semiconductor Co., Ltd
|
| 2SC3604 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
|
NEC[NEC]
|
| MP4T64533 |
Silicon Bipolar High fT Low Noise Microwave Transistors 硅双极高fT的微波低噪声晶体
|
M-Pulse Microwave, Inc.
|
| 2SC3356 |
NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold
|
California Eastern Labs
|
